Experimental characterization of CMOS APS imagers designed using two different technologies

摘要

Abstract: This paper presents measurements results performed onCMOS APS imagers implemented on two differenttechnologies. Both PhotoMOS (PM) and PhotoDiode (PD)structures have been designed by the CIMI-SUPAERO groupand high APS readout rate measurements have beenperformed by Matra Marconi Space. Every circuit alsoincludes the pixel's address decoders and the readoutcircuit required to perform on-chip correlated doublesampling and double delta sampling. The aim of thispaper is to compare performances of those arraysoperating at 5 Volts in terms of dark current, quantumefficiency, conversion gain, dynamic range. !8