CMOS active pixel image sensor with CCD performance

摘要

Abstract: A color CMOS image sensor has been developed which meets the performance of mainstream CCDs. The pixel combines a high fill factor with a low diode capacitance. This yields a high light sensitivity, expressed by the conversion gain of 9 $mu@V/electron and the quantum efficiency fill factor product of 28 percent. The temporal noise is 63 electrons, and the dynamic range is 67 dB. An offset compensation circuit in the column amplifiers limits the peak-to-peak fixed pattern noise to 0.15 percent of the saturation voltage. !9