首页> 外文OA文献 >Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging
【2h】

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

机译:用于生物医学成像的新型晶圆级CMOS有源像素传感器的性能

摘要

Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ≤ 1.9%. The uniformity of the image quality performance has been further investigated in a typical X-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practise. Finally, in order to compare the detection capability of this novel APS with the currently used technology (i.e. FPIs), theoretical evaluation of the Detection Quantum Efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, X-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.
机译:最近,在生物医学成像应用中,CMOS有源像素传感器(APS)已成为非晶硅和硒平板成像器(FPI)的宝贵替代品。 CMOS APS现在可以通过标线缝合块工艺放大到标准的20厘米直径晶圆尺寸。然而,尽管晶片级CMOS APS是单片的,响应的不均匀性和区域变化的根源仍将持续存在,这代表了晶片级传感器响应的重大挑战。缝合传感器的不均匀性可能由与制造过程有关的许多因素引起,包括放大率的变化,读出组件之间的变化,晶片缺陷以及由于制造过程而导致的整个晶片的过程变化。本文报道了对晶圆级缝合CMOS APS的空间不均匀性和区域变化的研究。首次提出了对晶片CMOS APS电光性能的逐像素分析,以解决由用于制造晶片规模传感器的缝合技术引起的不均匀性问题。已经提供了像素阵列中信号生成的完整模型,并证明了该模型能够解决整个像素阵列中的噪声和增益变化。这种新颖的分析导致可以在像素级别,拼接块级别以及感兴趣区域中评估读出噪声和转换增益,从而导致变异系数≤1.9%。在典型的X射线应用,即乳房X线照相术中,已经进一步研究了图像质量性能的均匀性,与临床实践中通常使用的乳房X射线照相检测器相比,其在CNR方面显示出最高的均匀性。最后,为了将这种新型APS的检测能力与当前使用的技术(即FPI)进行比较,已对零频率下的检测量子效率(DQE)进行了理论评估,与该检测器相比,DQE更高FPI。光学表征,X射线对比度测量和理论DQE评估表明,可以在需要大成像面积和需要统一成像性能之间找到一个权衡,这使得DynAMITe大面积CMOS APS适用于一系列生物-医学应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号