Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs

摘要

Strain-balanced In_xGa_(1-x)As/In_yGa_(1-y)As superlattices and fractional monolayer In_(0.532)Ga_(0.468)As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), room-temperature photoluminesecence (RTPL) and optical absorption measurement.