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Research on Nano and Giga Electronics - Breakthroughs Along the Path

机译:纳米和千兆电子学研究-突破之路

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摘要

MOSFETs and TFTs are key semiconductor devices in the two largest semiconductor industries nowadays. The development of the former follows the Moore's Law in shrinking of the size to the nano scale. The advancement of the latter is toward the high density, large area array. They are operated based on the same principle and facing common challenges. The success is dependent on the thorough understanding of material properties, fabrication processes, and device physics. The author reviews two sets of critical works developed in his laboratory, i.e., plasma thin film technology and high-k thin films for electronics and optoelectronics.
机译:MOSFET和TFT是当今两个最大的半导体行业中的关键半导体器件。前者的发展遵循摩尔定律,即将尺寸缩小到纳米级。后者的发展是朝着高密度,大面积的阵列发展。它们以相同的原则运作并面临共同的挑战。成功取决于对材料特性,制造工艺和器件物理的透彻了解。作者回顾了在他的实验室中开发的两套关键工作,即等离子薄膜技术和用于电子和光电子学的高k薄膜。

著录项

  • 来源
  • 会议地点 Chicago IL(US)
  • 作者

    Yue Kuo;

  • 作者单位

    Thin Film Nano and Microelectronics Research Laboratory Artie McFerrin Department of Chemical Engineering Texas AM University, College Station, TX 77843-3122;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-26 14:19:37

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