Proton Radiation Effects on the Analog Performance of Bulk n- and p-FinFETs

摘要

This paper presents an evaluation of the impact of 60 MeV Proton radiation on triple gate Bulk FinFETs, for both n and p types. The main focus is intrinsic voltage gain, threshold voltage and the OFF region drain current. The narrow nFinFET devices present an unexpected degradation of the drain current in the off-state region, which shows that the radiation affects severely the STI oxide resulting in a high parasitic conduction. The pFinFETs are more tolerant than the nFinFETs for environments that suffer from high-energy proton exposure.