Oxygen Annealing Behavior in Multicrystalline Silicon

摘要

Oxygen behavior in cast multicrystalline silicon (mc-Si) used for solar cells has been investigated during annealing in the temperature range of 450-1150℃. For comparison, the annealing of Czochralski (Cz) silicon with the almost same oxygen concentration was also carried out under the same conditions. The results revealed that the amount of oxygen precipitates formed in the mc-Si was the same as in the Cz silicon during annealing. It allows for the conclusion that oxygen precipitation does not affected by higher density dislocations and grain boundaries contained in the mc-Si. The experiments also pointed out that except for the process of oxygen precipitation, oxygen atoms were able to diffuse simultaneously into dislocations and grain boundaries in mc-Si silicon during 1150℃ annealing so that the oxygen concentration decreases greatly.