Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth

机译：Cz Si晶体生长过程中杂质迁移和点缺陷形成的建模

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We present a general model of global heat transport, flow, impurity transport, and defect evolution in Czochralski (CZ) Si crystal growth. The model is applied to an industrial CZ puller and verified using available experimental data. The effect of melt thermal instabilities on the defect incorporation at the crystallization front is studied using data obtained with a model of 3D unsteady melt convection.

机译：我们提出了总体热传输，流量，杂质传输和切克劳斯基（CZ）硅晶体生长中的缺陷演化的一般模型。该模型应用于工业CZ拉拔器，并使用可用的实验数据进行了验证。使用通过3D非稳态熔体对流模型获得的数据，研究了熔体热不稳定性对结晶前沿缺陷掺入的影响。

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来源
《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》|2001年|p.41-46|共6页
会议地点 S. Tecla(IT);S. Tecla(IT)
作者
V.V. Kalaev; V.A. Zabelin; Yu.N. Makarov;
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作者单位

Soft-Impact Ltd, 27 Engels av., PO Box 33, RU-194156 St. Petersburg, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
czochralski silicon growth; numerical simulation; oxygen transport; point defects;

机译：czochralski硅生长；数值模拟氧气输送点缺陷;

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专利

1. Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth [J] . V. V. Kalaev, V. A. Zabelin, Yu. N. Makarov Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2002,第0期

机译：Cz Si晶体生长过程中杂质迁移和点缺陷形成的建模
2. Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge_(1-x)Si_x bulk crystals [J] . O. V. Smirnova, V. V. Kalaev, Yu. N. Makarov, Journal of Crystal Growth . 2007,第1期

机译：Ge_（1-x）Si_x块状晶体Cz生长过程中熔体中硅迁移的三维非定常建模分析
3. The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditions [J] . Kazutaka Terashima, Hajime Noguchi Journal of Crystal Growth . 2002,第期

机译：硼杂质对富间隙条件下生长的CZ硅晶体扩展缺陷的影响
4. Two-dimensional model of the intrinsic point defects behaviour during Cz silicon crystals growth [C] . Anatolii I. Prostomolotov, Natalia A. Verezub International Conference on Solid State Crystals . 2001

机译：CZ硅晶体生长期间固有点缺陷行为的二维模型
5. The characterization of defects, impurities, and carriers in gallium arsenide crystal growth and their effects on the electrical properties, thermal stability, and implant anneal characteristics. [D] . Liao, De-Dui. 1990

机译：砷化镓晶体生长中缺陷，杂质和载体的特征及其对电性能，热稳定性和注入退火特性的影响。
6. Visible-Light Activation of Photocatalytic for Reduction of Nitrogen to Ammonia by Introducing Impurity Defect Levels into Nanocrystalline Diamond [O] . Rui Su, Zhangcheng Liu, Haris Naeem Abbasi, 2020

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7. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects [O] . Ho Yong Shin, Su Min Hong, Jong Won Yoon, 2013

机译：300mm长度的蓝宝石晶体CZ生长过程的数值分析：第二部分。晶体生长长度的预测，没有亚粒缺陷

Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth

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