Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si

摘要

Bulk, surface, and near surface regions of B doped, Cz grown, Si wafers have been characterised by electrical methods. The starting material was standard, 6" and 8" Cz Si wafers and high quality wafers with a low concentration of vacancy clusters. The effects of chemical and thermal treatments on the electrical properties of the starting wafers have been investigated.