Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

摘要

This paper addresses the effect of tin-doping on the electrical properties of n-type Czochralski (Cz) silicon, subjected to high-energy proton- and γ-irradiation. From Deep-Level Transient Spectroscopy (DLTS) results, it is clear that the introduction rate of the standard radiation defects, like the A and E centre and the divacancy is significantly reduced in tin-doped silicon. On the other hand, Sn-V centres are created upon the capture of vacancies by the substitutional tin atoms. The reported recombination lifetime experiments indicate that there seems to be an optimal Sn concentration for improving the post-irradiation electrical properties.