Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals Estimated via Grown-in Defect Behavior

摘要

We determined the thermal equilibrium concentrations (C_V~(eq), C_I~(eq)) and diffusion coefficients (D_V, D_I) of self-interstitial (I) and vacancy (V) in silicon crystal using the behavior of the grown-in defects in the Czochralski grown crystals. In earlier conventional works on grown-in defects, C_(V,I)~(eq) and D_(V,I) were estimated by a numerical simulation of the OSF (oxidation-induced stacking-faults) ring. However, there were two problems in these works. Firstly, the product values of DC~(eq) disagreed with the established experimental results, and secondly, the position of the OSF ring was assumed to be the neutral position for V and I. In this study we newly report C_(V,I)~(eq) and D_(V,I) values that consist of the Si self-diffusion coefficient (DC~(eq)) and yield results that correspond very well with the defect patterns. The parameters are in reasonable agreement with the theoretical result.