Future Opto-electrinic Materials; GaN on Si

摘要

To fabricate the future opto-electric IC, GaN epitaxial layer has been grown on 2 inch diameter Si substrates by using highly conductive BP buffer crystal. It has been found that the 2-inch GaN on BP/Si wafers are remarkably flat after epitaxial process. The combination of GaN and Si insights us wide use of the substrates such as UV laser, traffic signal and a new electrical devices. The heat conductivity increases by using Si substrates. As a result we can decorate high power devices on the substrates. In addition the mechanical- electric constant will be varied depending on the crystal type of GaN.