Narrow Channel Formation Using Asymmetric Halftone Exposure with Conventional Photolithography

摘要

Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below 4 μm with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.