首页> 外文会议>8th European Magnetic Materials and Applications Conference, Jun 7-10, 2000, Kyiv, Ukraine >Change of Crystalline Anisotropy after Laser Scribing in 3 SiFe Measured by Second Harmonics
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Change of Crystalline Anisotropy after Laser Scribing in 3 SiFe Measured by Second Harmonics

机译:用二次谐波测量在3%SiFe中激光划刻后的晶体各向异性变化

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摘要

The profiles of the second harmonics during B-H hysteresis loop have been measured as functions of the tensile stress in laser scribed 3 % SiFe. The harmonics profiles have been analyzed in terms of the nonlinear, asymmetric magnetization which reflects the domain reorientation under the field. The peak field interval of the second harmonics is related to nucleation and annihilation field. The nucleation field of 0.9 kA/m due to crystalline anisotropy increases up to 1.43 kA/m after laser scribing in [1 1 0] axial sample.
机译:已经测量了B-H磁滞回线期间二次谐波的轮廓,该轮廓是激光刻划3%SiFe中的拉伸应力的函数。已根据非线性,不对称磁化强度分析了谐波轮廓,该非线性非对称磁化强度反映了磁场下的磁畴重新定向。二次谐波的峰值场间隔与成核场和an灭场有关。在[1 1 0]轴向样品中进行激光划刻后,由于晶体各向异性而导致的0.9 kA / m的形核场增加至1.43 kA / m。

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