2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon(ULTPS) TFT direct fabricated below 200℃

摘要

We demonstrated 2.2inch qqVGA AMOLED displayrndrived by ultra low temperature poly-Si (ULTPS) TFTrnnot transferred but direct fabricated below 200oC. Sirnchannel was crystallized by decreasing impurityrnconcentration even at room temperature. Gaterninsulator with a breakdown field exceeding 8 MV/cmrnwas realized by Inductively coupled plasma - CVD. Inrnorder to reduce stress of plastic, organic film wasrncoated as inter-dielectric and passivation layers.rnFinally, ULTPS TFT of which mobility is over 20rncm2/Vsec was fabricated on transparent plasticrnsubstrate and drived OLED display successfully.