2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-PatterningTechnology by Wet Etch Process

摘要

2.22-inch qVGA (240 320) amorphous silicon thinrnfilm transistor liquid active matrix crystal display (a-rnSi TFT-AMLCD) panel has been successfullyrndemonstrated employing a 2.5 um fine-patterningrntechnology by a wet etch process. Higher resolutionrn2.22-inch qVGA LCD panel with an aperture ratio ofrn58% can be fabricated because the 2.5 um finernpattern formation technique is combined with highrnthermal photo-resist (PR) development. In addition, arnnovel concept of unique a-Si TFT process architecture,rnwhich is advantageous in terms of reliability, wasrnproposed in the fabrication of 2.22-inch qVGA LCDrnpanel. Overall results show that the 2.5 um finepatterningrnis a considerably significant technology tornobtain higher aperture ratio for higher resolution a-SirnTFT-LCD panel realization.