Pulsed laser/ion beam treatment of Ge/Si and Ge/Al2O3 thin film structures

摘要

Vacuum deposition of Ge thin films onto Si and Al2O3 substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al2O3 films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.