Change of the Sputtering Voltage during the Preparation of Vanadium Oxide Thin Films

摘要

Vanadium oxide thin films were deposited on P(100) silicon substrates with silicon nitride thin film layer by DC reactive magnetron sputtering method. Changes of the sputtering voltage in a certain flux of Ar gas and different flux ratio of Ar/O2 mixed conditions were studied. X-ray Photoelectron Spectroscopy (XPS) was performed to analyze the V/O ratio of the vanadium oxide thin films deposited. Square resistance (R□) and temperature coefficient of square resistance (TCR) of the thin films were examined. Surface morphology was visualized by atomic force microscope (AFM). Experiments demonstrate that the sputtering voltage has different change tendency in different gas conditions and the results revealed that V/O ratios of vanadium oxide thin films can be controlled by precisely control the sputtering voltage.