Study on interface recombination characteristics of crystalline-silicon/organic heterojunction solar cells

摘要

We have investigated the effect of interface recombination characteristics at the front- and rear-Si interface by reverse recovery study of PEDOT:PSS-Si/SnO_2(TiO_2) junction solar cells to understand the recombination velocity. We have found that, for PEDOT:PSS-Si junction solar cells the reverse charge storage time (～5.5µs) for the minority carrier is almost independent of the reverse recovery current. This can help to understand the effect of front-electron and rear-hole blocking layers on surface recombination velocity.