Controlling Silicon Surface Roughness During Photochemical Cleaning

摘要

The effect of photochemical chlorine process parameters on silicon surface roughness have been studied in a clusterable, single wafer, dry cleaning chamber suitable for gate stack pre-cleaning. High wafer temperature and UV power lead to measurable roughening and etching of the surface. Wafer temperatures of about 100 ℃ and UV doses of about 20 mJ/cm~2 are able to treat the silicon surface while maintaining a surface roughness of less than 0.1 nm rms.