The Role of Oxidant in HF-Based Solution for Noble Metal Removal from Substrate

机译：氧化剂在HF基溶液中去除基底上贵金属的作用

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摘要

This study was carried on to investigate and understand the role of oxidant in HF-based solution for removing copper contaminants on crystalline silicon surface. Its removal efficiency in solution is strongly dependent on the amount of oxidants as well as on the oxidation-reduction potential and pH value of solution.

机译：进行了这项研究，以调查和了解氧化剂在HF基溶液中对去除晶体硅表面上的铜污染物的作用。它在溶液中的去除效率在很大程度上取决于氧化剂的量以及溶液的氧化还原电位和pH值。

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来源
《5th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS), 5th, Sep 18-20, 2000, Ostend, Belgium》|2000年|p.267-270|共4页
会议地点 Ostend(BE);Ostend(BE)
作者
Geun-Min Choi; Ikunori Yokoi; Tadahiro Ohmi;
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作者单位

Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
FOM (HF/O_3); FPM (HF/H_2O_2); metallic impurity; removal efficiency;

机译：FOM（HF / O_3）;帧频（HF / H_2O_2）;金属杂质去除效率;

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The Role of Oxidant in HF-Based Solution for Noble Metal Removal from Substrate

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