Diffusion of Gold in the Amorphous Ceramic Si_(28)C_(36)N_(36)

摘要

After implantation of radioactive ~(195)Au-atoms into as-produced or pre-annealed polymer-derived, ceramic, amorphous Si_(28)C_(36)N_(36) or into sputter-deposited amorphous Si_3N_4 their diffusivity was measured as a function of temperature by means of a radiotracer technique, in which serial sectioning was done by Ar~+ -beam sputtering. The data are interpreted in terms of direct interstitial-like diffusion of the ~(195)Au-atoms through the meshes of the amorphous networks. An exception is the diffusion below 1000℃ in 1200℃-pre-annealed Si_(28)C_(36)N_(36), which is controlled by the dragging along of ~(195)Au-atoms with vacancies.