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An Efficient Spare-Line Replacement Scheme to Enhance NVM Security

机译:一种有效的备用线更换方案,可增强NVM的安全性

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摘要

Non-volatile memories (NVMs) are vulnerable to serious threat due to the endurance variation. We identify a new type of malicious attack, called Uniform Address Attack (UAA), which performs uniform and sequential writes to each line of the whole memory, and wears out the weaker lines (lines with lower endurance) early. Experimental results show that the lifetime of NVMs under UAA is reduced to 4.1% of the ideal lifetime. To address such attack, we propose a spare-line replacement scheme called Max-WE (Maximize the Weak lines’ Endurance). By employing weak-priority and weak-strong-matching strategies for spare-line allocation, Max-WE is able to maximize the number of writes that the weakest lines can endure. Furthermore, Max-WE reduces the storage overhead of the mapping table by 85% through adopting a hybrid spare-line mapping scheme. Experimental results show that Max-WE can improve the lifetime by 9.5 X with the spare-line overhead and mapping overhead as 10% and 0.016% of the total space respectively.
机译:非易失性存储器(NVM)由于耐久性变化而容易受到严重威胁。我们确定了一种新型的恶意攻击,称为统一地址攻击(UAA),该攻击对整个内存的每一行执行统一且顺序的写入,并尽早耗尽较弱的行(耐久度较低的行)。实验结果表明,在UAA下NVM的寿命降低到理想寿命的4.1%。为了解决这种攻击,我们提出了一种备用线路替换方案,称为Max-WE(最大化弱线路的耐力)。通过采用弱优先级和弱强匹配策略进行备用线分配,Max-WE能够最大化最弱的线可以承受的写入次数。此外,Max-WE通过采用混合备用线映射方案,将映射表的存储开销减少了85%。实验结果表明,Max-WE的使用寿命可以提高9.5倍,备用线路开销和映射开销分别占总空间的10%和0.016%。

著录项

  • 来源
  • 会议地点 Las Vegas(US)
  • 作者单位

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Nonvolatile memory; Resource management; Phase change materials; Operating systems; Random access memory; Programming; Memory management;

    机译:非易失性存储器;资源管理;相变材料;操作系统;随机存取存储器;编程;存储器管理;;

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