An NPN Bipolar Phototransisitor for Optical Encoders

摘要

We report on the development of an npn silicon bipolar phototransistor to be used in optical position encoders. Extensive numerical process and device simulations have been carried out, providing the guidelines for the definition of the phototran-sistor fabrication process. Results from the electrical and optical characterisation of manifactured devices are shown. With respect to the designed fabrication process, only little adjustment of the technological parameters has proven to be necessary to achieve the final product suitable for the intended application.