Nanoscratching tests on nanomachined silicon (100) surface using scanning probe microscope

摘要

A scanning probe microscope with a three-sided pyramidal diamond tip was used to make nanomachined area on (100) p-type single-crystal silicon sample at different normal loads. Nanoscratching tests were then performed on this pre-machined silicon surfaces using the same diamond tip in ambient conditions to explore material removal characteristics and deformation behaviour between the nanomachined (pre-machined) surface and diamond tip. Field emission scanning electron microscopy (FE-SEM) indicated that longer and thicker ribbon-like and curly chip-like debris existed on the nanomachined silicon surfaces than that on intact diamondcubic monocrystalline silicon surfaces. The depth of nanoscratch made on the nanomachined area was deeper than that on the intact silicon surface. However, the depth of nanoscratch varied slightly, when the normal loads of nanomachining (or pre-machining) exceeded 4 μN. This work provides some fundamental insights to reveal actual nanomachining mechanism of silicon wafer on nanoscale and at ultralow loads.