A 2.4-GHz Single-Pole Double-Throw T/R Switch with 0.8-dB Insertion Loss Implemented in a CMOS Process

摘要

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated using 3.3-V, 0.35-μm MOS transistors in a 0.18-μm CMOS process utilizing p~- substrates. The switch exhibits 0.8-dB insertion loss and 17-dBm P_(1dB). The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the source/drain-to-body capacitances and substrate resistances, while the high P_(1dB) is achieved by dc biasing the input and output nodes.