首页> 外文会议>26th European Solid-State Circuits Conference, Sep 19-21, 2000, Stockholm, Sweden >A High IP3 RF Receiver Chip Set for Mobile Radio Base Stations up to 2 GHz
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A High IP3 RF Receiver Chip Set for Mobile Radio Base Stations up to 2 GHz

机译:适用于高达2 GHz的移动无线基站的高IP3 RF接收器芯片组

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摘要

We present a monolithically integrated high IP3 RF receiver chip set for mobile radio base stations up to 2 GHz, in a 25 GHz f_T Si bipolar production technology. The chip set consists of a RF preamplifier, an active mixer and an IF limiter. The preamplifier gain is 12 dB, the noise figure is 5.5 dB and the IP3_(OUT) is +24 dBm at 900 MHz. The mixer conversion gain is 1.5 dB, the IP3_(OUT) is +26 dBm and the SSB noise figure is 16.5 dB. The limiter provides a high overload protection and a high bandwidth.
机译:我们采用25 GHz f_T Si双极生产技术,为高达2 GHz的移动无线电基站提供单片集成的高IP3 RF接收器芯片组。该芯片组包括一个射频前置放大器,一个有源混频器和一个中频限制器。在900 MHz时,前置放大器增益为12 dB,噪声系数为5.5 dB,IP3_(OUT)为+24 dBm。混频器转换增益为1.5 dB,IP3_(OUT)为+26 dBm,SSB噪声系数为16.5 dB。限幅器提供了高过载保护和高带宽。

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