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Improved ESR on MNO_2 Tantalum Capacitors at Wide Voltage Range

机译:宽电压范围内MNO_2钽电容器上的改进ESR

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摘要

One common trend in switch-mode power supply, microprocessor, and digital circuit applications is to achieve reduced noise while operating at higher frequencies. In order realize this, components with low Equivalent Series Resistance (ESR), high capacitance and high reliability are required. A new generation of Low ESR tantalum chip capacitors has been developed utilizing a low resistivity MnO_2 electrolyte that enables very low component ESR. MnO_2 technology provides excellent field performance, environmental stability and high electrical and thermal stress resistance in wide voltage range from four to thirty-five volts. The capacitors are designed for operation in temperatures up to 125℃.
机译:开关模式电源,微处理器和数字电路应用中的一个普遍趋势是,以更高的频率工作时可以降低噪声。为了实现这一点,需要具有低等效串联电阻(ESR),高电容和高可靠性的组件。利用低电阻率的MnO_2电解质开发了新一代的低ESR钽片式电容器,该电容器可实现非常低的ESR。 MnO_2技术可在4至35伏的宽电压范围内提供出色的现场性能,环境稳定性以及较高的抗电和热应力性能。这些电容器设计用于在高达125℃的温度下工作。

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