THE REMOVAL OF THE SILICA SLURRY PARTICLES IN POST-CMP OF THERMAL OXIDE SILICON WAFERS

摘要

This study shows the effects of the three key parameters (megasonic power, cleaning time and solution temperature) in wet cleaning process using a diluted SC1. Effective particle removal using megasonics with dilute SC1 chemistry is achieved from the polished thermal oxide wafers down to 38 defects per wafer. The results show that higher temperatures and megasonic powers provide the highest removal efficiency.