A study of secondary ion emission from silicon under improved experimental conditions

摘要

Experimental study of secondary ion emission from a clean silicon surface bombarded with a primary argon ion beam in the keV energy range under uhv is one of the most important fundamental works for SIMS. The experimental results obtained by different authors have been collected, compared and critically reviewed. In order to get reliable experimental results the main difficulties have been studied and the experimental conditions have been controlled and improved. It has been shown thai the reliable experimental results can only be obtained under carefully controlled experimental conditions. The better experimental results of positive and negative SIMS spectra from a clean silicon surface under uhv, its dependence upon the primary argon ion energy, the influence of the primary ion energy on the yield of singly and multiply charged atomic ions and cluster ions, some interesting phenomena of negative SIMS spectrum of silicon and a brief discussion are presented in this paper.