Simulation of radiation-induced supply leakage currents in modern digital CMOS thermometer DS18B20

机译：现代数字CMOS温度计DS18B20中辐射引起的电源泄漏电流的仿真

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The analytical model is used for the simulation of radiation-induced leakage current of digital thermometer DS18B20. The dependencies of the leakage current on the doserate, temperature, and electrical field are investigated experimentally and simulated.

机译：该分析模型用于模拟数字温度计DS18B20的辐射感应泄漏电流。实验研究了泄漏电流对剂量率，温度和电场的依赖性。

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来源
《2018 Moscow Workshop on Electronic and Networking Technologies》|2018年|1-3|共3页
会议地点 Moscow(RU)
作者
Rustem G. Useinov; Oleg V. Meshurov; Maxim G. Drosdetsky; Gennady I. Zebrev;
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作者单位

Research Institute of Scientific Instruments, Lytkarino, Moscow Region, Russia;

Department of Micro- and Nanoelectronics of National Research Nuclear University MEPHI, Moscow, Russia;

Department of Micro- and Nanoelectronics of National Research Nuclear University MEPHI, Moscow, Russia;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Leakage currents; Integrated circuit modeling; Radiation effects; Semiconductor device modeling; Analytical models; Temperature dependence;

机译：泄漏电流;集成电路建模;辐射效应;半导体器件建模;分析模型;温度依赖性;;

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1. Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions [J] . Le Roch Alexandre, Virmontois Cedric, Paillet Philippe, IEEE Transactions on Nuclear Science . 2019,第3期

机译：CMOS图像传感器感测节点浮动扩散中的辐射诱导泄漏电流和电场增强
2. Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions [J] . Le Roch Alexandre, Virmontois Cedric, Paillet Philippe, IEEE Transactions on Nuclear Science . 2019,第3期

机译：CMOS图像传感器感测节点浮动扩散中的辐射引起的漏电流和电场增强
3. Modeling of radiation-induced leakage currents in CMOS/SOI devices [J] . Rios R., Smeltzer R.K. IEEE Transactions on Nuclear Science . 1991,第6期

机译：CMOS / SOI器件中辐射引起的泄漏电流建模
4. Simulation of radiation-induced supply leakage currents in modern digital CMOS thermometer DS18B20 [C] . Rustem G. Useinov, Oleg V. Meshurov, Maxim G. Drosdetsky, Moscow Workshop on Electronic and Networking Technologies . 2018

机译：现代数字CMOS温度计DS18B20中辐射诱导供应漏电流的仿真
5. THE SIMULATION OF PULSED-IONIZING - RADIATION-INDUCED ERRORS IN CMOS MEMORY CIRCUITS. [D] . MASSENGILL, LLOYD WILSON. 1987

机译：CMOS存储器电路中脉冲电离辐射引起的误差的仿真。
6. Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage [O] . Alexandre Le Roch, Vincent Goiffon, Olivier Marcelot, 2019

机译：泄漏电流非均匀性和随机电报信号在CMOS图像传感器浮动扩散中用于贴上像素的电荷存储器
7. Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions [O] . Alexandre Le Roch, Cedric Virmontois, Philippe Paillet, 2019

机译：CMOS图像传感器感测节点浮动扩散中的辐射引起的漏电流和电场增强

Simulation of radiation-induced supply leakage currents in modern digital CMOS thermometer DS18B20

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