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Fabrication and electrical characterization of TiO2NT/RGO/Pd hybrid structure

机译:TiO 2 NT / RGO / Pd杂化结构的制备及电学表征

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In the present work, the room temperature electrical characterization ((a) Current-Voltage (I-V) and (b) Capacitance-Voltage (C-V)) of the ternary hybrid junction based on Pd nanoparticles, Reduced Graphene Oxide (RGO) and TiO2nanotubes is being reported. The heterojunction was fabricated by growing TiO2oxide layer on Ti substrate by anodization method. Electrochemically derived TiO2nanotubes were almost partially covered by transparent RGO layer, on top of which Pd nanoparticles were dispersed randomly. Structural, morphological and optical characterization like XRD, FESEM and PL were carried out in order to investigate the crystallinity, morphological feature and band gap of the grown film. Beside this, low barrier schottky nature and MOS capacitor like feature was confirmed respectively from the current-voltage characteristics (I-V) and capacitance-voltage (C-V) characteristics of the heterojunction of Au/(Pd/RGO/TiO2)/Ti based hybrid device respectively. Calculated the low threshold voltage of the device, as calculated from I-V and C-V plot, makes it useful for high performance and low power operation.
机译:在当前的工作中,基于Pd纳米粒子,还原氧化石墨烯(RGO)和TiO \的三元杂化结的室温电特性((a)电流-电压(IV)和(b)电容-电压(CV)) n 2 < / sub> \ nnanotubes被报告。通过生长TiO \ n 2 \ n氧化物层。电化学衍生的TiO \ n 2 \ nnanotubes几乎部分被透明的RGO层覆盖,在其上Pd纳米颗粒随机分散。为了研究生长薄膜的结晶度,形态特征和带隙,进行了XRD,FESEM和PL等结构,形态和光学表征。除此之外,分别根据Au /(Pd / RGO / TiO \ n 2 \ n )/基于Ti的混合设备。根据I-V和C-V图计算得出的器件低阈值电压,对高性能和低功耗操作非常有用。

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