LAAAS laboratory, dept of Electronics, Mostefa Benboulaid University, Batna 2, Algeria;
LAAAS laboratory, dept of Electronics, Mostefa Benboulaid University, Batna 2, Algeria;
LAAAS laboratory, dept of Electronics, Mostefa Benboulaid University, Batna 2, Algeria;
LEPCM laboratory, dept of Physic, University of Batna 1, Batna, Algeria;
Logic gates; HEMTs; Performance evaluation; Radio frequency; Transconductance; Gain; Doping;
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机译:<![CDATA [CDATA [尖晶石LIMN的高温性能
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机译:高k和门工程在提高
机译:适用于未来规模化技术的高介电常数电介质和高迁移率半导体:氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
机译:通过后退火实现具有高k Al2O3栅极电介质的溶胶-凝胶IGZO晶体管的电气性能的改善
机译:利用氧化还原性氧化物燃料电池的性能提高了氧化还原的PR $ LT; inf $ 0.6 $ / inf $ sr inf $ 0.4 $ / inf $ co $ inf $ 0.2 $ / inf $ fe $ inf $ 0.8 $ / inf $ o $ inf $ 3-delta $ / inf $ 电极