Role of High-K and Gate Engineering in Improving Rf/Analog Performances of In 0.2 Ga0.8As/Al0.3Ga0.7As HEMT

摘要

This work deals with the potential benefit of double gate field plate MOS-HEMT using Si3N4 as high-K for RF and analog applications. Analog and RF performances investigation is done using 2D Silvaco TCAD for a wide range of gate voltage (V_GS). The designed device shows better performances in terms of drain current (Id), cutoff frequency (fc), trans conductance (g_m) in contrast to the conventional Recessed Gate Pseudomorphic HEMT (RGP HEMT). However, a reduced trans conductance generation factor (gm/Id) is noticed. Simulation results are satisfactory and a drain current of 460 μm, a maximum gain of 447 dB, a peak gm of 4.22 ms/μm, and 520 GHz for fC are obtained. The efficiency of the proposed design is highlighted for high power and high-frequency applications.