Electrostatic actuation of the pulse-activated Piezo-NEMS shuttle relay

摘要

This paper reports on electrostatic switching of the Pulse-Activated Piezo-NEMS Shuttle Relay. This relay demonstrates a new highly scalable geometry that offers area independent performance - only layer thickness affects the device performance to first order. Additionally, testing demonstrates non-volatile states, proving the device can be used in memory applications. Switching was recorded at electrostatic voltages ranging 5V-19V depending on the starting state of the device. Although relatively high, this voltage is going to be used as a body bias in the ultimate envisioned utilization of the relay. An on resistance of 700±200Ω was measured for the relay.