Fast Recovery Performance of β-Ga2O3Trench MOS Schottky Barrier Diodes

摘要

Gallium oxide (Gan2nOn3n) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field ofn$sim 8 mathrm{MV}/mathrm{cm}$nand Baliga's FOM ofn$sim 3400$n. Among several polytypes of Gan2nOn3n, β-Gan2nOn3nis the most viable option that can provide cost-effective and high-quality wafers with an edge-defined film-fed growth (EFG) method [1]. Several groups have reported excellent electric characteristics of vertical-type power devices using the β-Gan2nOn3nwafers [2]–[4]. We also demonstrated Schottky barrier diodes (SBDs) [5], trench metal-oxide-semiconductor SBDs (MOSSBDs) [6], junction barrier Schottky diodes [7], and trench metal-oxide-semiconductor field-effect transistors (MOSFETs) [8].