Department of Electronics Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea;
Department of Electronics Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea;
Department of Electronic Engineering, Myongji University, Yongin-si, Gyeonggi-do, 17058, Republic of Korea;
Department of Electronic Engineering, Myongji University, Yongin-si, Gyeonggi-do, 17058, Republic of Korea;
RD Division, SK hynix, Inc., Icheon-si, Gyeonggi-do, 17336, Republic of Korea;
RD Division, SK hynix, Inc., Icheon-si, Gyeonggi-do, 17336, Republic of Korea;
Department of Electronics Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea;
Switches; Silicon; Annealing; Fabrication; Nonvolatile memory; Robustness; Memory management;
机译:在软击穿状态下基于Al
机译:无成形双极和单极电阻切换行为,ag / ti / ceo中的低工作电压
机译:双层HFO
机译:完全Si兼容无成形Geo
机译:基于五氧化二铜-铂金器件结构的纳米交叉电阻开关存储器的制作
机译:HfO2 / TiOx双层电阻随机存取存储器中的低功率电阻切换特性
机译:化学认识无成型电阻式随机存取存储设备的起源