Department of Electrical Computer Engineering, UT Austin, Microelectmnics Research Center, Austin, TX, 78758, USA;
Center for Quantum Nanoscience, Institutefor Basic Science (IBS), Seoul, 03760, RepublicofKorea;
Department of Materials Science Engineering, The University of Texas at Dallas, Dallas, TX, 75080, USA;
Materials Science Engineering Program, University of California, San Diego, La Jolla, CA, 92093, USA;
Materials Science Engineering Program, University of California, San Diego, La Jolla, CA, 92093, USA;
School of Electrical Computer, Engineering Cornell University, Ithaca, NY, 14850, USA;
Physics Department, University of Notre Dame, Notre Dame, IN, 46556, USA;
Department of Electrical Computer Engineering, UT Austin, Microelectmnics Research Center, Austin, TX, 78758, USA;
School of Electrical Computer, Engineering Cornell University, Ithaca, NY, 14850, USA;
Department of Materials Science Engineering, The University of Texas at Dallas, Dallas, TX, 75080, USA;
Materials Science Engineering Program, University of California, San Diego, La Jolla, CA, 92093, USA;
Department of Electrical Computer Engineering, UT Austin, Microelectmnics Research Center, Austin, TX, 78758, USA;
Field effect transistors; Two dimensional displays; Photonic band gap; Image edge detection; Sulfur; Lattices;
机译:通过Ar +离子束产生的表面缺陷增强二维p型WSe2晶体管的低电阻接触并提高迁移率
机译:石墨烯量子点/ 2D-WSe_2杂化结构中增强的p型行为
机译:通过湿化学途径通过依赖于受体缺陷的温度调节来提高载流子浓度的富氧p型ZnO薄膜
机译:通过化学缺陷工程增强了2D WSE2中的P型行为
机译:2D WSE2对节能隧道晶体管的新型退化掺杂的探索
机译:自组装二维WSe2薄膜用于光电化学制氢
机译:通过ar +离子束产生的表面缺陷,二维p型Wse2晶体管中增强的低电阻接触和增强的迁移率
机译:半导体电极。 31.在水溶液中具有n型和p型Wse2的光电化学和光伏系统