Temperature effect on electrophysical properties of As-deposited gold nanofilms for use in electronics devices and sensor technology

摘要

The influence of heating up to 240 degrees Celsius on the Hall voltage, the offset voltage and the resistivity of the as-deposited nanofilms of gold with a titanium adhesive sublayer is investigated. At a temperature of about 150 degrees Celsius, activation of irreversible changes in electrophysical parameters is observed. The possible reason for such behavior is the diffusion of titanium in gold. During repeated heating/cooling sessions, temperature dependencies are gradually stabilized, and the irreversibility of parameters disappears, which confirms the need for previous thermal annealing of nanofilms for use in electronics devices and sensor technology that operate at elevated temperatures. The nature of the stabilized temperature dependences of the Hall voltage and offset voltage allows the use of gold nanofilms with titanium sublayer as an active region of Hall sensors intended, in particular, for the systems of magnetic diagnostics of the new generation of ITER and DEMO fusion reactors.