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A high-linearity 6-GHz phase interpolator in 28-nm CMOS technology

机译:采用28 nm CMOS技术的高线性度6 GHz相位内插器

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摘要

This paper represents a wide-band low-power phase interpolator(PI) with high-linearity phase steps designed for Mobile industry Processor Interface(MIPI) standards like Multi-media Physical layer (MPHY) High speed Gear 2 that operates at 3GBps to HS-Gear 4 that operates at 6Gbps. The proposed PI consists of an input current-starved circuit for slew rate control, a core PI with cross coupled and diode connected loads, CML-to-CMOS output circuit, and a PI digital controller. The differential non-linearity(DNL) and integral non-linearity(INL) are within 0.15 LSB and 0.27 LSB respectively, The circuit is implemented in a 28-nm CMOS technology and operates from 1.5 to 6 GHz. The circuit consumes 2.2 mW from 0.9-V supply when operates at 6 GHz.
机译:本文介绍了具有高线性相位步长的宽带低功耗相位内插器(PI),该插值器设计用于移动工业处理器接口(MIPI)标准,例如以3GBps的速率运行于HS的多媒体物理层(MPHY)高速齿轮2 -运行速度为6Gbps的齿轮4。拟议的PI包括一个用于斜率控制的输入电流不足电路,一个具有交叉耦合和二极管连接负载的核心PI,CML至CMOS输出电路以及一个PI数字控制器。差分非线性(DNL)和积分非线性(INL)分别在0.15 LSB和0.27 LSB之内。该电路采用28 nm CMOS技术实现,工作频率为1.5至6 GHz。当工作在6 GHz时,该电路从0.9V电源消耗2.2 mW的功率。

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