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A 150GHz amplifier based on coupled transmission line neutralization and inter stage impedance matching with 20dB gain in 65nm CMOS

机译:基于耦合传输线中和和级间阻抗匹配且在65nm CMOS中具有20dB增益的150GHz放大器

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摘要

The design of a four-stage common-source (CS) 150 GHz amplifier in a 65nm technology is described. Each stage bases on the proposed technique of coupled transmission line (T-line) neutralization to achieve an improved intrinsic gain. Coupled T-line is also used for impedance matching, including both input and output, and inter stage impedance matching. Simulations show that the proposed amplifier circuit achieves a gain of 20 dB along with a 3dB bandwidth of 10GHz at 150GHz band, and a power consumption of 22 mW from a 1.2 V supply.
机译:描述了采用65nm技术的四级共源(CS)150 GHz放大器的设计。每个阶段都基于提出的耦合传输线(T线)中和技术,以实现改善的固有增益。耦合的T线也用于阻抗匹配,包括输入和输出以及级间阻抗匹配。仿真表明,所提出的放大器电路在150GHz频带上实现了20dB的增益以及10GHz的3dB带宽,并且在1.2V电源下的功耗为22mW。

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