Nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

机译：垂直磁化STT-MRAM单元中的纳秒级切换过程

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have studied experimentally the nanosecond-scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions.

机译：我们已经在垂直磁化的隧道结中实验性地研究了纳秒级自旋扭矩感应的开关。

著录项

来源
《2017 IEEE International Magnetics Conference》|2017年|1-1|共1页
会议地点 Dublin(IE)
作者
T. Devolder; J. Kim; J. Swerts; W. Kim; S. Couet; G.S. Kar; V. Nikitin;
展开▼
作者单位

Centre de Nanosciences et de Nanotechnologies, Orsay, France;

Centre de Nanosciences et de Nanotechnologies, Orsay, France;

IMEC, Leuven, Belgium;

IMEC, Leuven, Belgium;

IMEC, Leuven, Belgium;

IMEC, Leuven, Belgium;

Samsung Electronics Corporation, Milpitas, CA, USA;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Switches; Junctions; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Resistance; Magnetic switching;

机译：开关;结;磁畴壁;磁畴;磁隧穿;电阻;磁开关;

相似文献

外文文献
中文文献
专利

1. Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions [J] . T. Devolder, A. Le Goff, V. Nikitin Physical review. B, Condensed Matter And Materials Physics . 2016,第22期

机译：垂直磁化隧道结中纳秒级自旋转矩开关的尺寸依赖性
2. Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM [J] . Tiffany S. Santos, Goran Mihajlovic, Neil Smith, Journal of Applied Physics . 2020,第11期

机译：超薄垂直层，用于降低STT-MRAM的开关电流
3. 1× - to 2× -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below 100 μ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS [J] . Electron Devices, IEEE Transactions on . 2017,第2期

机译：低于100μA的亚3 ns脉冲下的1×-至2×-nm垂直MTJ开关，用于用于亚20 nm CMOS的高性能嵌入式STT-MRAM
4. Nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells [C] . T. Devolder, J. Kim, J. Swerts, IEEE Magnetics Conference . 2017

机译：垂直磁化的STT-MRAM细胞中的纳秒级切换过程
5. A Study of Spin-Orbit Torques and Deterministic Field-Free Switching of Perpendicular Magnetization [D] . Razavi, Seyed Armin. 2020

机译：旋转轨道扭矩的研究与垂直磁化的确定性现场切换
6. Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet [O] . Miao Jiang, Hirokatsu Asahara, Shoichi Sato, -1

机译：垂直磁化单晶铁磁体单层中的有效全自旋轨道转矩切换
7. Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells [O] . Devolder, Thibaut, Kim, Joo-Von, Swerts, J., 2017

机译：材料开发和基于畴壁的纳秒级切换在垂直磁化的sTT-mRam单元中的过程

Nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

摘要

著录项

相似文献

相关主题

期刊订阅