Department of Electrical Engineering, Technical University of Denmark, 348 Ørsted Plads, 2800 Kongens Lyngby, Denmark;
Department of Electrical Engineering, Technical University of Denmark, 348 Ørsted Plads, 2800 Kongens Lyngby, Denmark;
Department of Electrical Engineering, Technical University of Denmark, 348 Ørsted Plads, 2800 Kongens Lyngby, Denmark;
III-V Lab (joint lab of Nokia Bell Labs, Thales, and CEA-Leti), 1 avenue Augustine Fresnel, F-91767, Palaiseau Cedex, France;
III-V Lab (joint lab of Nokia Bell Labs, Thales, and CEA-Leti), 1 avenue Augustine Fresnel, F-91767, Palaiseau Cedex, France;
III-V Lab (joint lab of Nokia Bell Labs, Thales, and CEA-Leti), 1 avenue Augustine Fresnel, F-91767, Palaiseau Cedex, France;
III-V Lab (joint lab of Nokia Bell Labs, Thales, and CEA-Leti), 1 avenue Augustine Fresnel, F-91767, Palaiseau Cedex, France;
Power amplifiers; Indium phosphide; III-V semiconductor materials; Power generation; DH-HEMTs; Power measurement;
机译:G波段(140-220 GHz)和W波段(75-110 GHz)InP DHBT中功率放大器
机译:使用0.5μmInP DHBT技术的180至240 GHz宽带,基于EM的功率放大器
机译:基于0.5μm复合集电极InP DHBT的140 GHz功率放大器
机译:75 GHz INP DHBT功率放大器基于两堆叠晶体管
机译:InP HBT功率放大器MMIC在220GHz时可达到0.4W
机译:适用于2.5 GHz至6 GHz干扰器系统的紧凑型20W GaN内部匹配功率放大器
机译:140 GHz功率放大器基于0.5μm复合收集器INP DHBT
机译:采用Inp台面DHBT技术,在176 GHz时具有7 dB增益的共基极放大器