Lead chalcogenide films grown by pulsed laser deposition

摘要

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition. The films were grown on single crystal substrates (Si, KCl, Al₂O₃) and on Si covered with a Si₃N₄ buffer layer. The Si₃N₄ layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si₃N₄ was studied by means of the power spectral density analysis.