ESD Protection Design with Low-Leakage Consideration for Silicon Chips of IoT Applications

摘要

On-chip electrostatic discharge (ESD) protection design with low-leakage consideration for the silicon chips of IoT applications is presented. The proposed ESD protection design uses the fast turn-on silicon-controlled rectifier (SCR) device to implement the power-rail ESD clamp circuit. Experimental results verified in TSMC 28nm CMOS process have shown that the proposed design has advantages of low leakage current (2∼3nA), low trigger voltage (∼2V), high ESD robustness (>8kV), and free to latchup issue.