首页> 外文会议>2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications >Thin layer Ag-Sn transient liquid phase bonding using magnetron sputtering for chip to baseplate bonding
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Thin layer Ag-Sn transient liquid phase bonding using magnetron sputtering for chip to baseplate bonding

机译:使用磁控溅射的薄层Ag-Sn瞬态液相键合,用于芯片到基板的键​​合

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摘要

The formation of a high temperature die attach based on transient liquid phase (TLP) bonding is demonstrated using the binary system Ag-Sn in a sputtered thin layer approach. The microstructure and shear strength are compared to a foil based approach and show the successful replacement of the Sn foil and thus a simplification of the stack assembly. The diffusion of the Ag-Sn system is investigated in a long-term experiment at room temperature as well as in short-term experiments in the temperature range of the tin melting point. The results show the bondability of long-term stored samples and the possibility for decreased layer thickness while still enabling formation of the liquid phase to create the bond. TLP joints with a tin thickness of 2 μm are manufactured successfully and show comparable microstructures to thick layer joints. This approach offers an improved manufacturability of power modules.
机译:在溅射薄层方法中,使用二元体系Ag-Sn证明了基于瞬态液相(TLP)键合的高温芯片连接的形成。将微结构和剪切强度与基于箔的方法进行了比较,显示出成功替代了Sn箔,从而简化了堆叠组件。在室温下的长期实验以及在锡熔点温度范围内的短期实验中都研究了Ag-Sn系统的扩散。结果显示了长期储存的样品的可粘合性以及减小的层厚度的可能性,同时仍然能够形成液相以形成键。锡厚度为2μm的TLP接头已成功制造,并且具有与厚层接头相当的微观结构。这种方法可改善电源模块的可制造性。

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