Static and Dynamic Aspects of Different Tunneling NOI Nanotransistors with Oxide and Vacuum

摘要

This paper presents some alternative constructive variants accompanied by specific model parameters of an alternative Tunnel-FET. The main device body, responsible for the device conduction is the middle insulator - vacuum or oxide. When the device body is the vacuum or Nothing region On Insulator, the device is shortly called NOI. The device simulations are focused on the transfer characteristics. Also, dynamic and noise performances are investigated. They rather suggest the NOI applications: exponential I-V function generator, weak tunneling regime suitable for digital applications, device capacitances of 1aF and noise immunity make from NOI a promising candidate at Tera-hertz frequency applications.