Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan;
Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan;
Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan;
Inst. of Mechatronic Engineering, National Taipei University of Technology, Taipei 10608, Taiwan;
Dept. of Electrical Engineering, National Taiwan Ocean University, Keelung City 20224, Taiwan;
Dept. of Materials and Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan;
Implants; FinFETs; Doping; Threshold voltage; Controllability; Market research; Logic gates;
机译：（100）晶圆上单轴应变纳米节点金属氧化物半导体场效应晶体管的穿通和结击穿特性
机译：穿通停止植入物对Ge
机译：热载流量降解对具有自加热的多因子N沟道鳍状鳍片漏极引起的屏障下降的影响
机译：VT植入能量影响DIBL和纳米节点N沟道FINFET在SOI晶片上的效果
机译：离子注入半导体上毫秒激光退火的研究及其在规模化finfet技术中的应用。
机译：对土壤有机化学品的线性自由能关系进行比较：土壤和溶质性能的影响
机译：低温下SOI衬底上n通道FinFET的深度静态和低频噪声表征
