Centro Universitário FEI, Department of Electrical Engineering - Sao Bernardo do Campo, Brazil;
Centro Universitário FEI, Department of Electrical Engineering - Sao Bernardo do Campo, Brazil;
Centro Universitário FEI, Department of Electrical Engineering - Sao Bernardo do Campo, Brazil;
Centro Universitário FEI, Department of Electrical Engineering - Sao Bernardo do Campo, Brazil;
Logic gates; Standards; Transconductance; Threshold voltage; Performance evaluation;
机译:p型无结全栅纳米线晶体管的特性及灵敏度分析
机译:门 - 全周(GAA)P型多Si结纳米线/纳米片晶体管的可变性特性和角效应
机译:具有理想亚阈值斜坡的门 - 全面P型连接多Si纳米线晶体管的卓越的亚阈值特性
机译:不同晶体取向的p型结纳米线晶体管分析
机译:III-V纳米线晶体管和隧穿晶体管的建模,设计和分析
机译:AFM纳米光刻制造的p型双栅极和单栅极无结累积晶体管的电性能比较和电荷传输
机译:用于传感器应用的单门控圆柱通道连接P型纳米线效应晶体管的电气传递,载流子浓度和表面电荷分析