Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P. R. China;
College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P. R. China;
College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P. R. China;
Suzhou Nanowin Science and Technology Co. Ltd., Suzhou 215123, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P. R. China;
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;
Graphene; Gallium nitride; Buffer layers; Substrates; Surface treatment; Temperature;
机译:使用GaN,AlGaN和AlN缓冲层在r面蓝宝石衬底上进行a面GaN膜的MOCVD生长的比较研究
机译:使用GaN,AlGaN和AlN缓冲层在r平面蓝宝石衬底上MOCVD生长a平面GaN膜的比较研究
机译:低温沉积的缓冲层在蓝宝石上生长GaN层以及通过镁掺杂和电子束辐照实现p型GaN(诺贝尔讲座)
机译:在高温下使用非催化CVD石墨烯层直接生长GaN上的蓝宝石
机译:通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
机译:碳纳米管-石墨烯杂化结构上GaN层的直接生长及其在发光二极管中的应用
机译:在轴上蓝宝石衬底上的N极性GaN的mOCVD生长:alN的影响 GaN表面小丘密度上的成核层